The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Nov. 17, 2010
Naoki Yutani, Chiyoda-ku, JP;
Naoki Yutani, Chiyoda-ku, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode unitsis formed on an SiC chip, and each of the unitshas an external output electrodeindependently of each other. Bumps(the diameter is from several tens to several hundreds of μm) are formed only on the external output electrodesof non-defective units among the unitsformed on the SiC chip, meanwhile bumps are not formed on the external output electrodesof defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodesare connected in parallel to the exterior of the device through the bumps, and a wiring layerand an external leadof a wiring substrate; thus, only the external output electrodesof the non-defective unitsare connected in parallel with each other.