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For the Inventor, By the Inventor

Cambridge, MA, United States of America

Nadim Chowdhury

This inventor holds 13 USPTO granted patents and 5 published patent applications and 4 EPO patents. Top assignees: Mitsubishi Electric Research Laboratories, Inc., Massachusetts Institute of Technology. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nadim Chowdhury. Retrieved from https://idiyas.com/inventor/nadim-chowdhury

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 92.3

 

Average Co-Inventor Count = 2.1

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal12 out of 1,698 
 
Mitsubishi Electric Research Laboratories, Inc.
 patents
silverMedal1 out of 8,586 
 
Massachusetts Institute of Technology
 patents

Years Active: 2019-2026

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13 patents (USPTO):Explore Patents
1. 12720791 - High electron mobility transistors with low specific on-resistance (2026-08-25),
2. 12520516 - Semiconductor device with a changeable polarization direction (2026-01-06),
3. 12113061 - Semiconductor device with linear capacitance (2024-10-08),
4. 11973134 - Super junction gated AlGaN GaN HEMT (2024-04-30),
5. 11869946 - Etch-less AlGaN GaN trigate transistor (2024-01-09),
6. 11152471 - 2-dimensional electron gas and 2-dimensional hole gas junction based semiconductor device (2021-10-19),
7. 10910480 - Transistor with multi-metal gate (2021-02-02),
8. 10886393 - High electron mobility transistor with tunable threshold voltage (2021-01-05),
9. 10879368 - Transistor with multi-metal gate (2020-12-29),
10. 10658501 - Vertically stacked multichannel pyramid transistor (2020-05-19),
11. 10622960 - Filters with virtual inductor implemented using negative capacitor (2020-04-14),
12. 10418474 - High electron mobility transistor with varying semiconductor layer (2019-09-17),
13. 10276704 - High electron mobility transistor with negative capacitor gate (2019-04-30),

Title: The Innovative Contributions of Nadim Chowdhury

Introduction

Nadim Chowdhury is a prominent inventor based in Cambridge, MA, known for his significant contributions to the field of semiconductor technology. With a total of 11 patents to his name, Chowdhury has made remarkable advancements that have the potential to influence various applications in electronics.

Latest Patents

Chowdhury's latest patents include a groundbreaking semiconductor device with linear capacitance. This device features a first component with a negatively charged carrier channel and a second component with a positively charged carrier channel. The design allows for a capacitance profile that remains relatively linear and constant as the voltage at the gate terminal changes. Another notable patent is the super junction gated AlGaN GaN HEMT, which describes a transistor device with a unique structure that enhances performance. This device includes multiple layers of Nitride (III-N) materials, strategically doped to optimize functionality.

Career Highlights

Throughout his career, Nadim Chowdhury has worked with esteemed organizations such as Mitsubishi Electric Research Laboratories and the Massachusetts Institute of Technology. His work in these institutions has allowed him to push the boundaries of semiconductor research and development.

Collaborations

Chowdhury has collaborated with notable colleagues, including Koon Hoo Teo and Kon Hoo Teo. These partnerships have fostered an environment of innovation and creativity, leading to the development

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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