The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Apr. 08, 2021
Massachusetts Institute of Technology, Cambridge, MA (US);
Tomas Palacios, Belmont, MA (US);
Nadim Chowdhury, Cambridge, MA (US);
Qingyun Xie, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A semiconductor device having relatively linear and constant parasitic capacitance of an operation range includes a first component having a negatively charged carrier channel and a second component comprising a positively charged carrier channel. The first component has source terminal and a drain terminal. The second component has bias terminal. Both components share a gate terminal that is electrostatically coupled to the negatively charged carrier channel of the first component and the positively charged carrier channel of the second component to produce a capacitance profile that stays relatively linear and constant as a voltage at the gate terminal changes.