The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Oct. 17, 2017
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Koon Hoo Teo, Lexington, MA (US);
Nadim Chowdhury, Cambridge, MA (US);
Mitsubishi Electric Research Laboratiories, Inc., Cambridge, MA (US);
Abstract
A high electron mobility transistor includes a semiconductor structure having a channel layer and a cap layer forming a two dimensional electron gas (2-DEG) channel, and a source, a drain, and a gate electrodes. The gate is arranged on the cap layer between the source and the drains, such that the conductivity of the 2-DEG channel is modulated in response to applying voltage to the gate. The cap layer includes III-N material. The gate has a layered structure including a bottom metal layer arranged on cap layer, a ferroelectric oxide (FEO) layer arranged on bottom metal layer, and a top metal layer arranged on the FEO layer. Thickness of FEO layer is less than t/(2αε), wherein α is a parameter of material of FEO layer, tis thickness of cap layer, and εis electric permittivity of cap layer.