The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Mar. 26, 2020
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Koon Hoo Teo, Lexington, MA (US);
Nadim Chowdhury, Cambridge, MA (US);
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Abstract
Devices and methods of a transistor device including a source and a drain, the source and drain are at a horizontal plane at a location along a vertical direction. A gate, that is at a higher horizontal plane along the vertical direction then the source and drain horizontal plane. A first region under the source and drain horizontal plane, includes a first three Nitride (III-N) layer, a second III-N layer over the first III-N layer. A second region under the gate, includes a first III-N layer, a second III-N layer over the first III-N layer, and a third III-N layer over the second III-N layer. The third III-N layer at selective locations extends through the second III-N layer and into a portion of the first III-N layer along a width of the transistor. The third III-N layer is doped P-type, and the first and second III-N layers are unintentionally doped.