The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Oct. 17, 2017
Applicant:
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Inventors:
Koon Hoo Teo, Lexington, MA (US);
Nadim Chowdhury, Cambridge, MA (US);
Assignee:
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 21/04 (2006.01); H01L 21/441 (2006.01); H01L 21/465 (2006.01); H01L 29/66 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4983 (2013.01); H01L 21/044 (2013.01); H01L 21/28264 (2013.01); H01L 21/30604 (2013.01); H01L 21/30612 (2013.01); H01L 21/32139 (2013.01); H01L 21/441 (2013.01); H01L 21/465 (2013.01); H01L 29/1033 (2013.01); H01L 29/1606 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/24 (2013.01); H01L 29/41775 (2013.01); H01L 29/475 (2013.01); H01L 29/66045 (2013.01); H01L 29/66462 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/7783 (2013.01); H01L 29/7786 (2013.01); H01L 29/78696 (2013.01); H01L 29/1066 (2013.01);
Abstract
A transistor includes a gate electrode with multiple metals distributed along the width of the gate electrode. Each of the metals in the gate electrode has different work functions. Such a compound gate provides higher linearity when, e.g., operated as a radio frequency transistor.
Teo, Koon. (2020). Transistor with multi-metal gate (U.S. Patent No. 10879368). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10879368
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile