The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Mar. 26, 2020
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Kon Hoo Teo, Lexington, MA (US);
Nadim Chowdhury, Cambridge, MA (US);
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Abstract
Devices and methods of a field effect transistor device that include a source, a gate and a drain. The transistor includes a semiconductor region position is under the source, the gate and the drain. Such that the semiconductor region can include a gallium nitride (GaN) layer and an III Nitride (III-N) layer. Wherein the GaN layer includes a band gap, and the III-N layer includes a band gap. Such that the III-N layer band gap is higher than the GaN layer band gap. A sub-region of the semiconductor region is located underneath the gate and is doped with Mg ions at selective locations in the sub-region.