The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Oct. 17, 2017
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Koon Hoo Teo, Lexington, MA (US);
Nadim Chowdhury, Cambridge, MA (US);
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Abstract
A high electron mobility transistor (HEMT) includes a semiconductor structure including a cap layer and a channel layer forming a heterojunction, such that a two dimensional electron gas is formed at the interface of cap layer and the channel layer. The HEMT also includes a set of electrodes including a source electrode, a drain electrode, and a gate electrode deposited on the cap layer. The gate electrode is arranged between the source and the drain electrode along the length of the HEMT. The thickness of the cap layer at least under the gate electrode is varying along the width of the HEMT.