Mu-Chun Wang

This inventor holds 23 USPTO granted patents, primarily in Electrostatic Discharge Protection. Top assignees: United Microelectronics Corp., United Silicon Incorporated. Active years: 1999-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mu-Chun Wang. Retrieved from https://idiyas.com/inventor/mu-chun-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23

% Patents Active = 95.7

Average Co-Inventor Count = 2.1

ph-index = 7

Forward Citations = 141(Granted Patents)

Location History:

Hsinchu Hsien, TW (1999 - 2005)
Hsinchu, TW (2000 - 2007)

Company Filing History:

23 out of 7,278

United Microelectronics Corp.

patents

1 out of 54

United Silicon Incorporated

patents

where one patent can have more than one assignee

Years Active: 1999-2007

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Areas of Expertise:

CMOS

Electrostatic Discharge

Gate Dielectric

Semiconductor Device

Protection Structure

Reliability Testing

Antenna Effect

Plasma Damage

Circuit Design

Wafer Testing

Thin Film

Charging Damage

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7217980 - CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection (2007-05-15),

2. 6878581 - Electrostatic discharge protection structure and a method for forming the same (2005-04-12),

3. 6873505 - Electrostatic discharge protective circuitry equipped with a common discharge line (2005-03-29),

4. 6583641 - Method of determining integrity of a gate dielectric (2003-06-24),

5. 6483045 - Via plug layout structure for connecting different metallic layers (2002-11-19),

6. 6455910 - Cross guard-ring structure to protect the chip crack in low dielectric constant and copper process (2002-09-24),

7. 6448599 - Semiconductor device for preventing process-induced charging damages (2002-09-10),

8. 6291285 - Method for protecting gate oxide layer and monitoring damage (2001-09-18),

9. 6291281 - Method of fabricating protection structure (2001-09-18),

10. 6289291 - Statistical method of monitoring gate oxide layer yield (2001-09-11),

11. 6274494 - Method of protecting gate oxide (2001-08-14),

12. 6269315 - Reliability testing method of dielectric thin film (2001-07-31),

13. 6245610 - Method of protecting a well at a floating stage (2001-06-12),

14. 6242763 - Low triggering voltage SOI silicon-control-rectifier (SCR) structure (2001-06-05),

15. 6235642 - Method for reducing plasma charging damages (2001-05-22),

Title: The Innovative Journey of Mu-Chun Wang

Introduction: Mu-Chun Wang, a pioneering inventor hailing from Hsinchu Hsien, TW, is renowned for her groundbreaking contributions to the field of technology and innovation. Wang's relentless pursuit of excellence has led to numerous patents and collaborations that have shaped the landscape of modern inventions.

Latest Patents: Wang's latest patents showcase her ingenuity and forward-thinking approach to problem-solving. Her recent inventions have focused on sustainable energy solutions, advanced semiconductor technologies, and cutting-edge medical devices.

Career Highlights: With a distinguished career spanning over two decades, Mu-Chun Wang has held key positions in leading research institutions and technology companies. Her expertise in areas such as nanotechnology, artificial intelligence, and renewable energy has earned her recognition as a trailblazer in the industry.

Collaborations: Wang's collaborative spirit has been instrumental in driving innovation forward. She has worked closely with top researchers, engineers, and scientists from around the globe to develop groundbreaking technologies that have the potential to revolutionize various sectors.

Conclusion: Mu-Chun Wang's unwavering dedication to innovation and her remarkable contributions to the world of inventions have solidified her legacy as a visionary inventor. Her passion for pushing the boundaries of what is possible continues to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]