The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Nov. 29, 2000
Mu-Chun Wang, Hsin-Chu, TW;
Abstract
A semiconductor device for preventing process-induced charging damages is disclosed. The semiconductor device comprises a semiconductor layer, at least one transistor comprising a source region, a drain region, a channel region, a gate oxide layer and a gate electrode, at least one parasitic capacitor comprising a conductive layer, a dummy conductive layer constituting a dummy pattern, and a dielectric layer interposed between the conductive layer and the dummy conductive layer, a first conductor connecting the gate electrode and the conductive layer, and a second conductor connecting the semiconductor layer and the dummy conductive layer. Furthermore, the dummy conductive layer can be a floating layer over the semiconductor layer. In such manner, the second conductor set forth is replaced by an interposed dielectric layer.