The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jan. 14, 2000
Tzung-Han Lee, Taipei, TW;
Mu-Chun Wang, Hsin-Chu, TW;
United Microelectronics Corporation, Hsin-Chu, TW;
Abstract
A method for reducing plasma charging damages is disclosed. The method includes the following steps: define cell regions and scribe line regions on a substrate. Then, form a trench region on one of the scribe line regions wherein the bottom part of the trench region is in contact with the substrate. Thereupon fill the trench region with polysilicon substances. After the filling, deposit a pad polysilicon layer on the trench region. Following the pad layer formation, construct an integrated circuit as routine practice. During the circuit fabrication, several channel regions are formed in connection with the pad layer. Next, fabricate various conductive structures on the scribe line regions and link them also to the channel regions. Any excess charge in the scribe line region would be collected by the conductive structures and directed by the channel region to the trench region for grounding. Upon completion of the device fabrication, insulate the process to prevent charges from shifting back to the scribe line regions and damaging the device.