The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Dec. 16, 1998
Applicant:
Inventors:
Mu-Chun Wang, Hsinchu Hsien, TW;
Yih-Jau Chang, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/131 ;
Abstract
A method of protecting gate oxide. A chip having a gate thereon is provided. The gate structure comprises a gate oxide layer and a gate electrode. The gate is covered by a dielectric layer. A protection layer is formed on the dielectric layer. The protection layer is pattern to remain a part of the protection layer aligned over the gate.