The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Sep. 30, 2004
Shiao-shien Chen, Chung-Li, TW;
Tien-hao Tang, Hsin-Chu, TW;
Mu-chun Wang, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-chu, TW;
Abstract
An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present invention, the protection device includes a semiconductor substrate having a first conductivity type. A well region formed with a second conductivity type in the semiconductor substrate. A first region formed in the well region. A second region formed having a portion in the weil region and another portion outside the well region, but still within the semiconductor substrate. Moreover, a third region formed within the well region and in between the first; region and the second region. A fourth region formed within the semiconductor substrate and outside the well region. A fifth region formed within the semiconductor substrate and in between the second region and the fourth region. Furthermore, the second region and the fifth region form the n-pjunction of a zener diode and the breakdown voltage of the zener diode is controlled by adjusting the ion dosage in the second region.