Mitsuru Kaneda

Title: Mitsuru Kaneda: Innovator in Semiconductor Technology

Introduction

Mitsuru Kaneda is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work has been instrumental in advancing the efficiency and functionality of semiconductor devices.

Latest Patents

One of Kaneda's latest patents is a semiconductor device that includes an Insulated Gate Bipolar Transistor (IGBT) as a switching element, along with a diode. This innovative device features a p-type channel doped layer formed in the surface layer of a semiconductor substrate. The design includes a p-type diffusion layer and an n-type source layer, which are selectively formed in the surface layer of the p-type channel doped layer. The emitter electrode connects to both the n-type source layer and the p-type diffusion layer, ensuring optimal performance. Another notable patent is a switching element control device designed to manage a switching element that incorporates a reverse conducting diode. This device includes a voltage detection circuit, a comparator circuit, and a drive circuit, all working together to control the switching element effectively.

Career Highlights

Mitsuru Kaneda has worked with leading companies in the industry, including Mitsubishi Electric Corporation and Mitsubishi Denki Kabushiki Kaisha. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Kaneda has collaborated with notable colleagues, including Hideki Takahashi and Tetsuo Takahashi. Their combined expertise has contributed to the successful development of various semiconductor technologies.

Conclusion

Mitsuru Kaneda's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in electronic devices and systems.