The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Feb. 16, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Kenji Suzuki, Tokyo, JP;
Mitsuru Kaneda, Tokyo, JP;
Koichi Nishi, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object of the present invention is to provide a semiconductor device capable of preventing an occurrence of oscillation of voltage and current and a method of manufacturing the same. A semiconductor device according to the present invention includes an n type silicon substrate and a first n type buffer layer formed in a back surface of the n type silicon substrate and having a plurality of peaks of concentration of protons whose depths from the back surface are different from each other. In the first n type buffer layer, a concentration gradient of the protons from the peak located in a position closer to the back surface toward the surface of the n type silicon substrate is smaller than a concentration gradient of the protons from the peak located in a position farther away from the back surface toward the surface.