The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Sep. 13, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Tetsuo Takahashi, Tokyo, JP;
Mitsuru Kaneda, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes an IGBT as a switching element, and a diode. The IGBT includes: a p type channel doped layer formed in a surface layer part on a front side of a semiconductor substrate; a ptype diffusion layer and an ntype source layer individually selectively formed in a surface layer part of the p type channel doped layer; and an emitter electrode connected to the ntype source layer and the ptype diffusion layer. A part of the p type channel doped layer reaches a front-side surface of the semiconductor substrate and is connected to the emitter electrode. On the front-side surface of the semiconductor substrate, the ptype diffusion layer is interposed between the p type channel doped layer and an ntype source layer, and the p type channel doped layer and the ntype source layer are not adjacent to each other.