The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Apr. 29, 2004
Applicants:
Norifumi Tokuda, Tokyo, JP;
Tadaharu Minato, Tokyo, JP;
Mitsuru Kaneda, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes an n-type semiconductor substrate () including a p-type collector layer () formed in a second main surface side thereof, a trench () is formed in a peripheral portion of the semiconductor substrate () so as to surround the inside and reach the collector layer () from a first main surface of the semiconductor substrate (), and a p-type isolation region () formed by diffusion from a sidewall of the trench () is provided to be connected to the collector layer (). The trench () is filled with a filling material ().