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For the Inventor, By the Inventor

Higashihiroshima, Japan

Mitsuhiro Horikawa

This inventor holds 16 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignees: Elpida Memory, Inc., Intermolecular, Inc., Nec Corporation. Active years: 1999-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuhiro Horikawa. Retrieved from https://idiyas.com/inventor/mitsuhiro-horikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 43.8

Average Co-Inventor Count = 2.0

ph-index = 5

Forward Citations = 97(Granted Patents)


Location History:

  • Tokyo, JP (1999 - 2014)
  • Higashihiroshima, JP (2013 - 2016)

Company Filing History:

goldMedal8 out of 1,458 
 
Elpida Memory, Inc.
 patents
silverMedal7 out of 726 
 
Intermolecular, Inc.
 patents
bronzeMedal5 out of 36,735 
 
Nec Corporation
 patents
4. 1 out of 336 
 
Hitachi Ulsi Systems Co., Ltd.
 patents
5. 1 out of 42,743 
 
Hitachi, Ltd.
 patents
6. 1 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2016

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Areas of Expertise:
DRAM Capacitor
MIM Capacitor
High K Dielectric
Semiconductor Device
Leakage Improvement
Dielectric Stack
Metal Impurities
Polysilicon Layers
Silicon Oxide Layers
Manufacturing Method
Memory Cells
Interface Resistance
16 patents (USPTO):Explore Patents
1. 9281357 - DRAM MIM capacitor using non-noble electrodes (2016-03-08),
2. 8969169 - DRAM MIM capacitor using non-noble electrodes (2015-03-03),
3. 8815695 - Methods to improve leakage for ZrO2 based high K MIM capacitor (2014-08-26),
4. 8748325 - Method of manufacturing semiconductor device (2014-06-10),
5. 8546236 - High performance dielectric stack for DRAM capacitor (2013-10-01),
6. 8541283 - High performance dielectric stack for DRAM capacitor (2013-09-24),
7. 8476141 - High performance dielectric stack for DRAM capacitor (2013-07-02),
8. 8415227 - High performance dielectric stack for DRAM capacitor (2013-04-09),
9. 8026184 - Semiconductor device and method of manufacturing the same (2011-09-27),
10. 7790613 - Semiconductor device and method of manufacturing the same (2010-09-07),
11. 7224016 - Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film (2007-05-29),
12. 6562733 - Semiconductor device manufacturing method (2003-05-13),
13. 6372611 - Semiconductor manufacturing method including gettering of metal impurities (2002-04-16),
14. 6300680 - Semiconductor substrate and manufacturing method thereof (2001-10-09),
15. 6046095 - Semiconductor substrate having polysilicon layers and fabrication (2000-04-04),

Title: The Innovative Journey of Mitsuhiro Horikawa

Introduction: Mitsuhiro Horikawa is a renowned inventor hailing from Higashihiroshima, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Mitsuhiro Horikawa holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Horikawa has worked with leading tech companies and research institutions, playing a pivotal role in the development of cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Mitsuhiro Horikawa has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing that has led to numerous successful projects and inventions.

Conclusion: Mitsuhiro Horikawa's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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