The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Jan. 14, 1998
Mitsuhiro Horikawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method of manufacturing a semiconductor device, a first polysilicon film is formed on a surface of a semiconductor substrate for a semiconductor element to be formed thereon. Ion implantation is performed in such a manner that impurity ions are implanted into the semiconductor substrate surface through the first polysilicon film. The semiconductor substrate is heated to a first temperature after the step of performing ion implantation. Then, the semiconductor substrate is gradually cooled with a predetermined cooling rate at least from a second temperature to a third temperature while the semiconductor substrate is cooled from the first temperature. The second and third temperatures are lower than the first temperature. Subsequently, the polysilicon film is removed after the gradually cooling step.