logo

For the Inventor, By the Inventor

Ehime, Japan

Mitsuaki Kabasawa

This inventor holds 30 USPTO granted patents and 7 EPO patents, primarily in Ion Implantation Technology. Top assignees: Sumitomo Heavy Industries Ion Technology Co., Ltd., Sen Corporation, an Shi and Axcelis Company, Sumitomo Eaton Nova Corporation. Active years: 2003-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuaki Kabasawa. Retrieved from https://idiyas.com/inventor/mitsuaki-kabasawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30

% Patents Active = 76.7

 

Average Co-Inventor Count = 3.4

ph-index = 7

Forward Citations = 158(Granted Patents)


Location History:

  • Saijo, JP (2003 - 2010)
  • Ehime, JP (2004 - 2016)

Company Filing History:

goldMedal10 out of 81 
 
Sumitomo Heavy Industries Ion Technology Co., Ltd.
 patents
silverMedal7 out of 12 
 
Sen Corporation, an Shi and Axcelis Company
 patents
bronzeMedal7 out of 21 
 
Sumitomo Eaton Nova Corporation
 patents
4. 6 out of 23 
 
Sen Corporation
 patents

Years Active: 2003-2016

Loading Chart...
Loading Chart...
Areas of Expertise:
Ion Implantation Apparatus
High-Energy Ion Implanter
Beam Processing System
Electrostatic Beam Deflection
Irradiation System
Beam Current Control
Ion Beam Processing
Wafer Charge Compensation
Beam Parallelizing Apparatus
Low-Energy Ion Implantation
Ion Beam Scanning
Ion Source Tuning
30 patents (USPTO):Explore Patents
1. 9466467 - Ion implantation apparatus (2016-10-11),
2. 9431214 - Ion implantation apparatus (2016-08-30),
3. 9390890 - High-energy ion implanter (2016-07-12),
4. 9384944 - Ion implanter and ion implantation method (2016-07-05),
5. 9368327 - High-energy ion implanter (2016-06-14),
6. 9355847 - High-energy ion implanter (2016-05-31),
7. 9343262 - Ion implantation apparatus, beam parallelizing apparatus, and ion implantation method (2016-05-17),
8. 9236222 - Ion implantation apparatus and ion implantation method (2016-01-12),
9. 9208996 - Ion implantation apparatus and ion implantation method (2015-12-08),
10. 9208991 - Ion implantation apparatus (2015-12-08),
11. 8987690 - High-energy ion implanter (2015-03-24),
12. 8952340 - High-frequency acceleration type ion acceleration and transportation apparatus having high energy precision (2015-02-10),
13. 7982192 - Beam processing apparatus (2011-07-19),
14. 7851772 - Ion implantation apparatus and ion implantation method (2010-12-14),
15. 7755067 - Ion implantation apparatus and method of converging/shaping ion beam used therefor (2010-07-13),

Title: Mitsuaki Kabasawa: Pioneering Inventor from Ehime

Introduction: Mitsuaki Kabasawa is a renowned inventor hailing from Ehime, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kabasawa's recent patents include advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to creating cutting-edge technologies for a better future.

Career Highlights: With a career spanning over two decades, Kabasawa has worked with leading research institutions and tech companies to develop innovative solutions that have revolutionized various industries. His expertise in engineering and design has led to the successful commercialization of several groundbreaking inventions.

Collaborations: Throughout his career, Kabasawa has collaborated with top scientists, engineers, and inventors from around the world, fostering a culture of innovation and knowledge sharing. His collaborative efforts have resulted in the development of transformative technologies that have had a lasting impact on society.

Conclusion: Mitsuaki Kabasawa's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazing inventor in the global tech community. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…