The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Dec. 04, 2013
Applicant:
Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;
Inventors:
Mitsuaki Kabasawa, Ehime, JP;
Kazuhiro Watanabe, Ehime, JP;
Hitoshi Ando, Ehime, JP;
Kouji Inada, Ehime, JP;
Tatsuya Yamada, Ehime, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/00 (2006.01); H01J 37/32 (2006.01); H01J 37/30 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32412 (2013.01); H01J 37/3007 (2013.01); H01J 37/3171 (2013.01); H01J 2237/057 (2013.01); H01J 2237/10 (2013.01);
Abstract
An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.