The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Apr. 10, 2008
Mitsukuni Tsukihara, Ehime, JP;
Takanori Yagita, Ehime, JP;
Yoshitaka Amano, Ehime, JP;
Mitsuaki Kabasawa, Ehime, JP;
Mitsukuni Tsukihara, Ehime, JP;
Takanori Yagita, Ehime, JP;
Yoshitaka Amano, Ehime, JP;
Mitsuaki Kabasawa, Ehime, JP;
SEN Corporation, Tokyo, JP;
Abstract
An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.