The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
May. 29, 2014
Applicant:
Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;
Inventors:
Mitsuaki Kabasawa, Ehime, JP;
Kazuhiro Watanabe, Ehime, JP;
Haruka Sasaki, Ehime, JP;
Kouji Inada, Ehime, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H05H 7/04 (2006.01); H05H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H05H 7/04 (2013.01); H05H 9/045 (2013.01); H01J 2237/1518 (2013.01); H05H 2007/046 (2013.01);
Abstract
A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter.