The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Apr. 10, 2008
Mitsukuni Tsukihara, Saijo, JP;
Takanori Yagita, Saijo, JP;
Hiroshi Sogabe, Saijo, JP;
Toshio Yumiyama, Saijo, JP;
Mitsuaki Kabasawa, Saijo, JP;
Mitsukuni Tsukihara, Saijo, JP;
Takanori Yagita, Saijo, JP;
Hiroshi Sogabe, Saijo, JP;
Toshio Yumiyama, Saijo, JP;
Mitsuaki Kabasawa, Saijo, JP;
Sen Corporation an Shi and Axcelis Company, Tokyo, JP;
Abstract
An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.