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For the Inventor, By the Inventor

McKinney, TX, United States of America

Ming-Yeh Chuang

This inventor holds 28 USPTO granted patents and 7 published patent applications, primarily in FinFET Technology. Top assignee: Texas Instruments Corporation. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Yeh Chuang. Retrieved from https://idiyas.com/inventor/ming-yeh-chuang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 28 

% Patents Active = 96.4

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:

goldMedal28 out of 29,922 
 
Texas Instruments Corporation
 patents

Years Active: 2005-2026

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Areas of Expertise:
FinFET
Transistor
Field Plate
Isolation
Implant
Schottky Diode
LDMOS
Bipolar Transistor
Gate Dielectric
Current Gain
Charge Balance
Dielectric Structures
28 patents (USPTO):Explore Patents
1. 12772521 - Method of fabricating LDMOS transistor with deep well implant through unmasked gate structure and a shallow well implant through masked gate structure (2026-10-20),
2. 12568647 - Bird's beak profile of field oxide region (2026-03-03),
3. 12520557 - Transistor with field plate over tapered trench isolation (2026-01-06),
4. 12424443 - Fin field-effect transistor semiconductor device and method of forming the same (2025-09-23),
5. 12336277 - Fin field-effect transistor (FinFET) with a high-K material field-plating (2025-06-17),
6. 12324176 - Implant blocking for a trench or FinFET without an additional mask (2025-06-03),
7. 12278290 - Low resistive source/backgate finFET (2025-04-14),
8. 12113121 - Uniform implant regions in a semiconductor ridge of a FinfET (2024-10-08),
9. 12074216 - Fin field effect transistor with field plating (2024-08-27),
10. 11916142 - finFET with lateral charge balance at the drain drift region (2024-02-27),
11. 11658184 - Fin field effect transistor with merged drift region (2023-05-23),
12. 11508842 - Fin field effect transistor with field plating (2022-11-22),
13. 11437496 - Uniform implant regions in a semiconductor ridge of a FinFET (2022-09-06),
14. 11152506 - FinFET with lateral charge balance at the drain drift region (2021-10-19),
15. 11121224 - Transistor with field plate over tapered trench isolation (2021-09-14),

Title: Innovator Spotlight: Ming-Yeh Chuang

Introduction: Ming-Yeh Chuang is a prominent inventor based in McKinney, Texas, known for his remarkable contributions to the field of semiconductor technology. With a total of 21 patents to his name, his work has significantly impacted the design and fabrication of integrated circuits.

Latest Patents: Among his latest patents, one notable innovation is the method for fabricating a semiconductor ridge in a FinFET (Fin Field Effect Transistor). This method involves forming a semiconductor ridge over a substrate’s surface and creating an implant screen that is substantially thicker on the top than on the sidewalls. This strategic design ensures optimal dopant implantation, enhancing the performance of integrated circuits. Another significant patent is for an integrated circuit incorporating a FinFET that features a specially designed drift region and field plating oxide layer, further improving circuit efficiency.

Career Highlights: Ming-Yeh Chuang is currently associated with Texas Instruments Corporation, where he plays a crucial role in advancing their semiconductor technologies. His extensive portfolio of patents illustrates his commitment to innovation and excellence within the industry.

Collaborations: Throughout his career, Ming-Yeh has collaborated with talented professionals such as Sameer P Pendharkar and Richard B Irwin. These partnerships have allowed for the exchange of creative ideas and have significantly contributed to the successful development of various patented technologies.

Conclusion: Ming-Yeh Chuang's work demonstrates the power of innovation in the semiconductor industry. With his continuous contributions to advanced circuit design and fabrication methods, he remains a vital figure in the ongoing evolution of technology. His legacy is reflected in his numerous patents and the impact they have on future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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