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For the Inventor, By the Inventor

McKinney, TX, United States of America

Ming-Yeh Chuang

USPTO Granted Patents = 25 

Average Co-Inventor Count = 1.4

ph-index = 2

Forward Citations = 26(Granted Patents)


Company Filing History:

goldMedal25 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 2005-2025

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25 patents (USPTO):
1. 12424443 - Fin field-effect transistor semiconductor device and method of forming the same (2025-09-23),
2. 12336277 - Fin field-effect transistor (FinFET) with a high-K material field-plating (2025-06-17),
3. 12324176 - Implant blocking for a trench or FinFET without an additional mask (2025-06-03),
4. 12278290 - Low resistive source/backgate finFET (2025-04-14),
5. 12113121 - Uniform implant regions in a semiconductor ridge of a FinfET (2024-10-08),
6. 12074216 - Fin field effect transistor with field plating (2024-08-27),
7. 11916142 - finFET with lateral charge balance at the drain drift region (2024-02-27),
8. 11658184 - Fin field effect transistor with merged drift region (2023-05-23),
9. 11508842 - Fin field effect transistor with field plating (2022-11-22),
10. 11437496 - Uniform implant regions in a semiconductor ridge of a FinFET (2022-09-06),
11. 11152506 - FinFET with lateral charge balance at the drain drift region (2021-10-19),
12. 11121224 - Transistor with field plate over tapered trench isolation (2021-09-14),
13. 11004971 - LDMOS transistor with gate structure having alternating regions of wider and narrower spacing to a body region (2021-05-11),
14. 10586730 - Trench isolated IC with transistors having LOCOS gate dielectric (2020-03-10),
15. 10211335 - LDMOS transistor with segmented gate dielectric layer (2019-02-19),

Title: Innovator Spotlight: Ming-Yeh Chuang

Introduction: Ming-Yeh Chuang is a prominent inventor based in McKinney, Texas, known for his remarkable contributions to the field of semiconductor technology. With a total of 21 patents to his name, his work has significantly impacted the design and fabrication of integrated circuits.

Latest Patents: Among his latest patents, one notable innovation is the method for fabricating a semiconductor ridge in a FinFET (Fin Field Effect Transistor). This method involves forming a semiconductor ridge over a substrate’s surface and creating an implant screen that is substantially thicker on the top than on the sidewalls. This strategic design ensures optimal dopant implantation, enhancing the performance of integrated circuits. Another significant patent is for an integrated circuit incorporating a FinFET that features a specially designed drift region and field plating oxide layer, further improving circuit efficiency.

Career Highlights: Ming-Yeh Chuang is currently associated with Texas Instruments Corporation, where he plays a crucial role in advancing their semiconductor technologies. His extensive portfolio of patents illustrates his commitment to innovation and excellence within the industry.

Collaborations: Throughout his career, Ming-Yeh has collaborated with talented professionals such as Sameer P Pendharkar and Richard B Irwin. These partnerships have allowed for the exchange of creative ideas and have significantly contributed to the successful development of various patented technologies.

Conclusion: Ming-Yeh Chuang's work demonstrates the power of innovation in the semiconductor industry. With his continuous contributions to advanced circuit design and fabrication methods, he remains a vital figure in the ongoing evolution of technology. His legacy is reflected in his numerous patents and the impact they have on future generations of inventors.

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