The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Jul. 06, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Ming-Yeh Chuang, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/765 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 21/765 (2013.01); H01L 29/063 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/66681 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
An integrated circuit (IC) having a fin field effect transistor (FinFET) includes a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, a drift region, and field plating oxide layer. The drift region is adjacent the drain region. The field plating oxide layer is on a first side, a second side, and a third side of the drift region.