The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Aug. 31, 2021
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Ming-Yeh Chuang, McKinney, TX (US);
Abbas Ali, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/62 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0241 (2025.01); H10D 30/6217 (2025.01); H10D 30/6219 (2025.01);
Abstract
A method of fabricating an integrated circuit includes forming and patterning a hardmask over a substrate such that the patterned hardmask exposes regions of the substrate. The exposed regions are etched, thereby forming trenches and a semiconductor fin between the trenches. Prior to removing the hardmask, a photoresist layer is formed and patterned, thereby exposing a section of the semiconductor fin. A dopant is implanted into the exposed section through the hardmask.