The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Dec. 08, 2021
Texas Instruments Incorporated, Dallas, TX (US);
Bhaskar Srinivasan, Allen, TX (US);
Walter Scott Idol, Plano, TX (US);
Ming-Yeh Chuang, McKinney, TX (US);
Brian Goodlin, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A fin field-effect transistor ('FinFET') semiconductor device and method of forming the same. In one example, a semiconductor fin is formed over a semiconductor substrate. A conformal dielectric layer is formed on a top and side surfaces of the fin. A doped semiconductor layer is formed over the conformal dielectric layer, the doped semiconductor layer including a dopant. The doped semiconductor layer is heated thereby driving the dopant through the conformal dielectric layer and forming a doped region of the fin.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile