Ming Li

Title: The Innovative Contributions of Ming Li

Introduction

Ming Li is a prominent inventor based in Singapore, known for his significant contributions to the field of transistor devices. With a total of 13 patents to his name, he has made remarkable advancements in semiconductor technology.

Latest Patents

Ming Li's latest patents include innovative designs and methods for forming transistor devices. One of his notable inventions describes a transistor device that incorporates a substrate, drain terminal, source terminal, and gate terminal. This design features an insulator structure positioned between the drain and source terminals, which includes an oxide member and a trench isolation region. Another significant patent focuses on dual gate LDMOS technology, detailing a method for creating a high voltage device. This method involves forming a substrate with a defined high voltage device region, creating a device well, and establishing a drift region within the well. The process also includes forming a variable thickness gate dielectric and a gate electrode that overlaps the thick gate oxide.

Career Highlights

Throughout his career, Ming Li has worked with notable companies such as Globalfoundries Singapore Pte. Ltd. and Razer (Asia-Pacific) Pte. Ltd. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in the semiconductor industry.

Collaborations

Ming Li has collaborated with talented individuals in his field, including Jeoung Mo Koo and Purakh Raj Verma. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Ming Li's work in the field of transistor devices showcases his dedication to innovation and technology. His patents reflect a deep understanding of semiconductor design and manufacturing processes. As he continues to push the boundaries of technology, his contributions will undoubtedly have a lasting impact on the industry.