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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9870939 B1

PDFFull Text
Date of Patent:
Jan. 16, 2018

Filed:

Aug. 28, 2015

Rc-stacked mosfet circuit for high voltage (hv) electrostatic discharge (esd) protection

Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Handoko Linewih, Singapore, SG;

Ming Li, Singapore, SG;

Sevashanmugam Marimuthu, Kulim, MY;

Ronghua Yu, Malta, NY (US);

Assignee:

GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;

Attorney:

Horizon IP Pte. Ltd.

Primary Examiner:

Danny Nguyen

Int. Cl.
CPC ...
H02H 3/22 (2006.01); H01L 21/762 (2006.01); H02H 9/04 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 27/0274 (2013.01); H01L 27/0629 (2013.01); H01L 29/1095 (2013.01); H02H 9/04 (2013.01);
Abstract

Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device includes N ones of a field effect transistor (FET) stacked in series to provide an N-level stack, where N is an integer greater than 1. A first pad of the device is coupled to a first FET and a second pad is coupled to an Nth FET. The device also includes a stacked/distributed RC control circuit configured to cause a short circuit between the first pad and the second pad in response to an ESD event. During the ESD event, the RC control circuit is configured to concurrently provide sufficient voltage to control the N ones of the FET by turning them on using parasitic conduction to cause the short circuit.

Find Patent Forward Citations

Linewih, Handoko. (2018). Rc-stacked mosfet circuit for high voltage (hv) electrostatic discharge (esd) protection (U.S. Patent No. 9870939). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9870939

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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