The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Aug. 15, 2013
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Da-Wei Lai, Singapore, SG;

Ming Li, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01);
Abstract

A device having a substrate defined with a device region is presented. The device region includes an ESD protection circuit having a transistor. The transistor includes a gate having first and second sides, a first diffusion region adjacent to the first side of the gate and a second diffusion region displaced away from the second side of the gate. The device includes a first device well which encompasses the device region and a second device well disposed within the first device well. The device further includes a drift well which encompasses the second diffusion region of which edges of the drift well do not extend below the gate and is away from a channel region, and a drain well which is disposed under the second diffusion region and extends below the gate.


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