The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Apr. 14, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ming Li, Singapore, SG;

Sivaramasubramaniam Ramasubramaniam, Singapore, SG;

Dong Hyun Shin, Singapore, SG;

Di Wu, Singapore, SG;

Yunpeng Xu, Singapore, SG;

Chenji Zou, Singapore, SG;

Jeoung Mo Koo, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/0223 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 29/41725 (2013.01); H01L 29/66681 (2013.01); H01L 21/02255 (2013.01);
Abstract

According to various embodiments, a transistor device may include a substrate. The transistor device may further include a drain terminal and a source terminal formed in the substrate, and a gate terminal formed over the substrate. The transistor device may further include an insulator structure arranged between the drain terminal and the source terminal, and at least partially under the gate terminal. The insulator structure may include an oxide member and a trench isolation region. The oxide member may be at least partially formed over the trench isolation region.


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