Hsinchu, Taiwan

Ming-Han Liao


Average Co-Inventor Count = 2.2

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Taipei, TW (2010 - 2017)
  • Hsinchu, TW (2018 - 2023)

Company Filing History:


Years Active: 2010-2025

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15 patents (USPTO):

Title: **Innovator Ming-Han Liao: Pioneering Advances in Ferroelectric Memory Structures**

Introduction

Ming-Han Liao, based in Hsinchu, Taiwan, is an esteemed inventor known for his significant contributions to the field of semiconductor technology. With a total of 13 patents to his name, his work primarily focuses on the development of advanced ferroelectric memory structures, showcasing his innovative prowess in this rapidly evolving domain.

Latest Patents

Among Ming-Han Liao’s most recent inventions are two groundbreaking patents related to ferroelectric memory structures. The first patent describes a unique configuration comprising a substrate, a ferroelectric capacitor structure, and a switch device. This structure integrates a ferroelectric capacitor that features alternating layers of electrodes and dielectric materials, facilitating improved memory performance. The second patent elaborates on a ferroelectric memory structure that incorporates multiple ferroelectric capacitors with varying configurations, enhancing memory cell operations through intricate interconnections between conductive lines and switch devices.

Career Highlights

Ming-Han Liao has had an impactful career at notable companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Powerchip Semiconductor Manufacturing Corporation. His experience in these organizations has not only contributed to his professional growth but also played a significant role in the advancement of semiconductor technologies.

Collaborations

Throughout his career, Ming-Han Liao has worked alongside esteemed colleagues like Shou-Zen Chang and Min-Cheng Chen. These collaborations have enabled the exchange of ideas and fostered innovative solutions that have contributed to the development of cutting-edge ferroelectric technologies.

Conclusion

Ming-Han Liao stands out as a prominent inventor shaping the future of memory technology through his innovative patents and collaborations. His dedication to advancing semiconductor technology continues to influence the industry, marking him as a key figure in the realm of ferroelectric memory structures.

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