The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Jun. 11, 2015
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Cho-Fan Hsieh, Luodong Township, TW;

Chih-Hua Chen, Taipei, TW;

Hung-Sen Wu, Taoyuan, TW;

Teng-Chun Wu, Jinning Township, TW;

Ming-Han Liao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/008 (2006.01); H01G 4/10 (2006.01); H01G 4/01 (2006.01); H01G 4/33 (2006.01); H01L 49/02 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/10 (2013.01); H01G 4/008 (2013.01); H01G 4/01 (2013.01); H01G 4/33 (2013.01); H01L 28/75 (2013.01); H01G 4/1218 (2013.01);
Abstract

The present disclosure provides a magnetic capacitor structure including a first electrode, a second electrode opposite to the first electrode, a dielectric layer disposed between the first electrode and the second electrode, a first magnetic layer disposed between the first electrode and the dielectric layer, a second magnetic layer disposed between the second electrode and the dielectric layer, a first oxide layer disposed between the first electrode and the first magnetic layer, and a second oxide layer disposed between the second magnetic layer and the dielectric layer.


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