The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Apr. 20, 2023
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A semiconductor structure including a device wafer, a carrier structure, and a redistribution layer (RDL) structure is provided. The device wafer includes a first substrate, a first dielectric layer, first bonding pads, and a power via structure. The carrier structure includes the following components. A second substrate has a third surface and a fourth surface opposite to each other. A second dielectric layer is located on the third surface. Second bonding pads are located in the second dielectric layer. The second bonding pads are bonded to the first bonding pad, and the second dielectric layer is bonded to the first dielectric layer. A heat dissipation plate is located on the fourth surface. Through-substrates via (TSVs) pass through the second substrate. The TSV is electrically connected to the heat dissipation plate and the second bonding pad. The RDL structure is electrically connected to the power via structure.