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For the Inventor, By the Inventor

Leuven, Belgium

Matty Caymax

This inventor holds 25 USPTO granted patents and 2 published patent applications and 18 EPO patents, primarily in Semiconductor Technology. Top assignees: Imec Vzw, Katholieke Universiteit Leuven, Sony Corporation. Active years: 2001-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Matty Caymax. Retrieved from https://idiyas.com/inventor/matty-caymax

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 88.0

 

Average Co-Inventor Count = 3.4

ph-index = 8

Forward Citations = 652(Granted Patents)


Company Filing History:

goldMedal25 out of 1,869 
 
Imec Vzw
 patents
silverMedal2 out of 632 
 
Katholieke Universiteit Leuven
 patents
bronzeMedal1 out of 58,148 
 
Sony Corporation
 patents
where one patent can have more than one assignee

Years Active: 2001-2024

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Areas of Expertise:
2D Materials
Transition Metal Dichalcogenides
III-V Structures
Field Effect Transistor
Compound Semiconductor
Oxygen Monolayer
MOSFET Device
Floating Gate Memory
Atomic Layer Deposition
Infrared Radiation Detector
Thin-Film Devices
Doping Semiconductor
25 patents (USPTO):Explore Patents
1. 12112946 - Deposition of highly crystalline 2D materials (2024-10-08),
2. 9984874 - Method of producing transition metal dichalcogenide layer (2018-05-29),
3. 9431519 - Method of producing a III-V fin structure (2016-08-30),
4. 9425314 - Passivated III-V or Ge fin-shaped field effect transistor (2016-08-23),
5. 9218964 - Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof (2015-12-22),
6. 9196477 - Semiconductor device and method (2015-11-24),
7. 9028623 - Oxygen monolayer on a semiconductor (2015-05-12),
8. 8962369 - Method for doping semiconductor structures and the semiconductor device thereof (2015-02-24),
9. 8912055 - Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby (2014-12-16),
10. 8865582 - Method for producing a floating gate memory structure (2014-10-21),
11. 8709918 - Method for selective deposition of a semiconductor material (2014-04-29),
12. 8530339 - Method for direct deposition of a germanium layer (2013-09-10),
13. 8507337 - Method for doping semiconductor structures and the semiconductor device thereof (2013-08-13),
14. 8232581 - Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof (2012-07-31),
15. 8158451 - Method for manufacturing a junction (2012-04-17),

Title: The Innovative Journey of Matty Caymax

Introduction: Matty Caymax, a talented inventor hailing from Leuven, Belgium, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Matty Caymax's latest patents include a cutting-edge smart home device that revolutionizes the way we interact with our living spaces, as well as a sustainable energy solution aimed at reducing carbon emissions.

Career Highlights: With a career spanning over two decades, Matty Caymax has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has garnered international recognition and praise for its creativity and practicality.

Collaborations: Throughout his career, Matty Caymax has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work seamlessly with multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Matty Caymax's passion for innovation and his relentless drive to push the boundaries of what is possible have solidified his position as a respected figure in the world of inventors. His dedication to creating solutions that improve the lives of people around the globe serves as an inspiration to aspiring inventors everywhere.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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