The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Dec. 18, 2014
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;
IMEC VZW, Leuven, BE;
Katholieke Universiteit Leuven, KU LEUVEN R&D, Leuven, BE;
Abstract
Method of producing one or more transition metal dichalcogenide (MX) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MXon the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (HX), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MXlayers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.