The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Feb. 20, 2014
Applicant:
Imec, Leuven, BE;
Inventors:
Annelies Delabie, Bierbeek, BE;
Matty Caymax, Leuven, BE;
Assignee:
IMEC, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01); H01L 29/02 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/02 (2013.01); H01L 21/02181 (2013.01); H01L 21/02236 (2013.01); H01L 21/0228 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02499 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01); H01L 21/02255 (2013.01); H01L 21/306 (2013.01);
Abstract
A Si or Ge semi-conductor substrate includes an oxygen monolayer on a surface thereof. The oxygen monolayer can be fractional or complete. A Sior Geoxidation state of the surface of the Si or Ge substrate, respectively, resulting from the presence of the oxygen monolayer represents less than 50%, preferably less than 40% and more preferably less than 30% of the sum of Si, Si, Siand Sioxidation states or the sum of Ge, Ge, Geand Geoxidation states, respectively, as measured by XPS.