The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Mar. 05, 2014
Applicant:

Imec, Leuven, BE;

Inventors:

Clement Merckling, Leuven, BE;

Matty Caymax, Leuven, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/0254 (2013.01); H01L 21/02532 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/76224 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a top surface, and at least one coated fin protruding perpendicularly from the surface and having a height h and side walls. The at least one coated fin further includes a core of one or more layers selected from the group consisting of (a) III-V compound layers and (b) a Ge layer, and a coating overlaying the core. The coating includes one or more metal oxide layers, at least one of which is aluminium. The device also includes a recess surrounding the at least one coated fin and being defined between two coated fins when more than one fin is present. The recess is filled up with a dielectric material so as to cover the coating on the side walls of the at least one fin up to a certain height h', which is less than the height h. The present disclosure also relates to a method for producing the semiconductor device.


Find Patent Forward Citations

Loading…