Chiba, Japan

Masanobu Saito

This inventor holds 47 USPTO granted patents and 5 published patent applications and 3 EPO patents, primarily in NAND Memory Technology. Top assignees: Kabushiki Kaisha Toshiba, Canon Kabushiki Kaisha, Micron Technology Incorporated. Active years: 1992-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masanobu Saito. Retrieved from https://idiyas.com/inventor/masanobu-saito

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47 

% Patents Active = 70.2


Average Co-Inventor Count = 4.6

ph-index = 12

Forward Citations = 438(Granted Patents)


Location History:

  • Yokohama, JP (1992 - 1995)
  • Kawasaki, JP (1995 - 1997)
  • Kashiwa, JP (2000 - 2002)
  • Ciba, JP (2005)
  • Shizuoka-ken, JP (2006)
  • Kanagawa, JP (2007)
  • Shizuoka, JP (2005 - 2008)
  • Suntou-gun, JP (2012)
  • Inageku, JP (2018 - 2019)
  • Chiba, JP (1995 - 2024)

Company Filing History:


Years Active: 1992-2026

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Areas of Expertise:
Capacitive Sense NAND
Memory Array Structures
Non-Volatile Memory
Image Forming Apparatus
MOSFET Technology
Integrated Circuit
Memory Device
Semiconductor Device
Voltage Control
Developer Carrying Members
Image Processing
Data Erasure
47 patents (USPTO):Explore Patents

Title: Innovations by Masanobu Saito: A Pioneer in Memory Technology

Introduction

Masanobu Saito, located in Chiba, Japan, is a prolific inventor with an impressive portfolio of 46 patents. His expertise lies in the field of memory technologies, where he has made significant advancements that have influenced the industry. This article will explore his latest patents, career highlights, and collaborations with other professionals.

Latest Patents

Among Masanobu Saito's latest inventions is an innovative apparatus containing memory array structures having multiple sub-blocks. This apparatus includes an array of memory cells comprised of a plurality of strings of series-connected memory cells, a data line, and various sets of field-effect transistors interfacing with the memory cells. The design features N field-effect transistors, each fabricated with respective binary permutations of threshold voltages, enabling enhanced performance in memory applications.

Another noteworthy patent focuses on the methods of forming integrated circuit structures for capacitive sense NAND memory. The process involves creating a multi-layered semiconductor structure that enhances the functionality and efficiency of NAND memory designs. This method includes a vertical channel material structure coupled with a series of connected field-effect transistors that greatly improve memory performance.

Career Highlights

Masanobu Saito has held positions at prestigious organizations, including Toshiba Corporation and Canon Inc. His contributions to these companies have played a pivotal role in advancing memory technology, making him a respected figure in the field of semiconductor research and development.

Collaborations

Throughout his career, Saito has collaborated with talented colleagues, such as Hisayo S. Momose and Hiroshi Iwai. These partnerships have fostered an environment of innovation and have led to several groundbreaking advancements in memory device technologies.

Conclusion

Masanobu Saito's contributions to the field of memory technology, evidenced by his numerous patents and collaborations, underscore his status as a leading inventor. His innovative approaches to memory structures and integrated circuit designs continue to shape the future of technology, showcasing the critical role inventors play in the advancement of modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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