The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Dec. 04, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yoshiaki Fukuzumi, Yokohama, JP;

Jun Fujiki, Tokyo, JP;

Shuji Tanaka, Kanagawa, JP;

Masashi Yoshida, Yokohama, JP;

Masanobu Saito, Chiba, JP;

Yoshihiko Kamata, Yokohama, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); H01L 27/11582 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

Memory might include a non-volatile memory cell, a capacitance selectively connected to the non-volatile memory cell, a field-effect transistor having a channel capacitively coupled to an electrode of the capacitance, and a controller for access of the non-volatile memory cell configured to cause the memory to increase a voltage level of the electrode of the capacitance, selectively discharge the voltage level of the electrode of the capacitance through the non-volatile memory cell responsive to a data state stored in the non-volatile memory cell, and determine whether the field-effect transistor is activated in response to a remaining voltage level of the electrode of the capacitance.


Find Patent Forward Citations

Loading…