The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Dec. 04, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yoshiaki Fukuzumi, Yokohama, JP;

Jun Fujiki, Tokyo, JP;

Shuji Tanaka, Kanagawa, JP;

Masashi Yoshida, Yokohama, JP;

Masanobu Saito, Chiba, JP;

Yoshihiko Kamata, Yokohama, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01); G11C 16/34 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); G11C 16/3427 (2013.01); H01L 27/11582 (2013.01);
Abstract

Arrays of memory cells a plurality of sense lines each having a respective plurality of pass gates connected in series between a second data line and a source, and having a respective subset of unit column structures capacitively coupled to first channels of its respective plurality of pass gates, wherein, for each sense line of the plurality of sense lines, each unit column structure of its respective subset of unit column structures is connected to a respective first data line of a respective subset of first data lines.


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