The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Jul. 29, 2022
Micron Technology, Inc., Boise, ID (US);
Yoshiaki Fukuzumi, Yokohama, JP;
Jun Fujiki, Tokyo, JP;
Shuji Tanaka, Kanagawa, JP;
Masashi Yoshida, Yokohama, JP;
Masanobu Saito, Chiba, JP;
Yoshihiko Kamata, Yokohama, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of forming integrated circuit structures for a capacitive sense NAND memory include forming a first semiconductor overlying a dielectric, forming a second semiconductor to be in contact with a first end of the first semiconductor, forming a third semiconductor to be in contact with a second end of the first semiconductor opposite the first end of the first semiconductor, forming a vertical channel material structure overlying the first semiconductor and having a channel material capacitively coupled to the first semiconductor, and forming a plurality of series-connected field-effect transistors adjacent the vertical channel material structure.