The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Dec. 04, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Yoshiaki Fukuzumi, Yokohama, JP;
Jun Fujiki, Tokyo, JP;
Shuji Tanaka, Kanagawa, JP;
Masashi Yoshida, Yokohama, JP;
Masanobu Saito, Chiba, JP;
Yoshihiko Kamata, Yokohama, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/04 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01);
Abstract
An array of memory cells might include a first data line, a second data line, a source, a capacitance selectively connected to the first data line, a string of series-connected non-volatile memory cells between the first data line and the capacitance, and a pass gate selectively connected between the second data line and the source, wherein an electrode of the capacitance is capacitively coupled to a channel of the pass gate.