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For the Inventor, By the Inventor

Yokohama, Japan

Masahiko Takikawa

This inventor holds 10 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1990-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiko Takikawa. Retrieved from https://idiyas.com/inventor/masahiko-takikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 6

Forward Citations = 90(Granted Patents)


Location History:

  • Yokohama, JP (1990 - 1992)
  • Kawasaki, JP (1994 - 1999)

Company Filing History:

goldMedal10 out of 39,374 
 
Fujitsu Corporation
 patents

Years Active: 1990-1999

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10 patents (USPTO):Explore Patents
1. 5949095 - Enhancement type MESFET (1999-09-07),
2. 5945695 - Semiconductor device with InGaP channel layer (1999-08-31),
3. 5900641 - Field effect semiconductor device having a reduced leakage current (1999-05-04),
4. 5818078 - Semiconductor device having a regrowth crystal region (1998-10-06),
5. 5302840 - HEMT type semiconductor device having two semiconductor well layers (1994-04-12),
6. 5170230 - Semiconductor device and production method thereof (1992-12-08),
7. 5148245 - Semiconductor device having a selectively doped heterostructure (1992-09-15),
8. 5128275 - Method for fabricating a semiconductor device including a (1992-07-07),
9. 5104825 - Method of producing a semiconductor device (1992-04-14),
10. 4958203 - High electron mobility transistor (1990-09-18),

Title: Masahiko Takikawa: Innovator in Semiconductor Technology

Introduction

Masahiko Takikawa is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance of semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of Takikawa's latest patents is for an enhancement type MESFET. This invention involves a carrier transfer layer of compound semiconductor material that is strategically placed on a support substrate. A gate electrode made of conductive material is positioned on the carrier transfer layer, with a cap layer of non-doped compound semiconductor material on either side of the gate electrode. This design ensures that the gain and output power of the MESFET are not diminished. Another notable patent is for a semiconductor device featuring an InGaP channel layer. This device includes a GaAs substrate and a buffer layer with a wider band gap than InGaP. The channel layer, made of InGaP, allows for high-speed and high-voltage operation, thanks to its excellent carrier mobility.

Career Highlights

Masahiko Takikawa is currently employed at Fujitsu Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of electronic devices, making them faster and more efficient.

Collaborations

Throughout his career, Takikawa has collaborated with notable colleagues, including Toshihide Kikkawa and Masaki Nagahara. These partnerships have fostered a creative environment that has led to groundbreaking advancements in the field.

Conclusion

Masahiko Takikawa's contributions to semiconductor technology are noteworthy and impactful. His innovative patents and collaborations highlight his dedication to advancing electronic device performance. His work continues to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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