The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1990
Filed:
Nov. 02, 1987
Applicant:
Inventor:
Masahiko Takikawa, Yokohama, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 16 ;
Abstract
A high electron mobility transistor comprises a semiinsulating substrate, an undoped channel layer formed on the semiinsulating substrate and made of undoped gallium arsenide (GaAs), a doped carrier supplying layer formed on the undoped channel layer and made of a II-VI family compound semiconductor having an electron affinity smaller than that of the undoped gallium arsenide and having an energy gap greater than that of the undoped gallium arsenide, and source, drain and gate electrodes formed on the doped carrier supplying layer.
Takikawa, Masahiko. (1990). High electron mobility transistor (U.S. Patent No. 4958203). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4958203
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile