The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1992
Filed:
Sep. 10, 1991
Masahiko Takikawa, Yokohama, JP;
Yuji Awano, Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device having a selectively doped heterostructure comprises a substrate, a channel layer, a carrier supplying layer, and electrodes provided on the carrier supplying layer. The channel layer and the carrier supplying layer form a heterojunction interface at a boundary between the channel layer and the carrier supplying layer with a two-dimensional electron gas formed in the channel layer along the heterojunction interface. The carrier supplying layer and the channel layer have respective compositions determined such that the .GAMMA. valley of the conduction band of the carrier supplying layer has an energetical level higher than a corresponding energetical level of the .GAMMA. valley of the conduction band of the channel layer at the heterojunction interface, the L valley of the conduction band of the carrier supplying layer has an energetical level higher than a corresponding energetical level of the L valley of the conduction band of the channel layer at the heterojunction interface, the X valley of the conduction band of the carrier supplying layer has an energetical level higher than a corresponding energetical level of the X valley of the conduction band at the heterojunction interface, the energetical level of the .GAMMA. valley of the conduction band of the carrier supplying layer is equal to or higher than the energetical level of the L valley of the conduction band of the channel layer at the heterojunction interface, and the energetical level of the L valley of the conduction band of the carrier supplying layer is equal to or higher than the energetical level of the X valley of the conduction band of the channel layer at the heterojunction interface.