The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Sep. 15, 1997
Applicant:
Inventor:
Masahiko Takikawa, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257201 ; 257280 ;
Abstract
A semiconductor device comprises a GaAs substrate 10; a buffer layer 12 formed on the GaAs substrate 10 and having a wider band gap than that of InGaP; a channel layer 14 formed on the buffer layer 12 and formed of an InGaP; a gate electrode 34 for controlling current of the channel layer 14. InGaP has a high carrier mobility and large .GAMMA.-L energy difference. Accordingly, the channel layer is formed of InGaP, whereby the semiconductor device which is operable at high speed and high voltage can be obtained.
Takikawa, Masahiko. (1999). Semiconductor device with ingap channel layer (U.S. Patent No. 5945695). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5945695
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile