The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Aug. 13, 1996
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257192 ; 257268 ; 257280 ; 257631 ; 257194 ;
Abstract
A carrier transfer layer of compound semiconductor material is disposed on or over a support substrate, and a gate electrode of conductive material is disposed on or over the carrier transfer layer at a partial region thereof. A cap layer of non-doped compound semiconductor material is disposed on or over the carrier transfer layer at both sides of the gate electrode. The thickness of the cap layer is 100 nm or thicker. two current electrodes are formed in ohmic contact with the carrier transfer layer. An enhancement mode MESFET is provided whose gain and output power are suppressed from being lowered.