The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1992
Filed:
Jan. 25, 1991
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C30B / ;
U.S. Cl.
CPC ...
437 81 ; 437 94 ; 156613 ; 148D / ; 148D / ;
Abstract
A method for fabricating a compound semiconductor device having a semi-insulating layer of a group III-V compound semiconductor material that contains arsenic as a group V element. The method includes a step of growing the semi-insulating layer from a source gas of the group V element that contains both arsine and an organic compound of arsenic, wherein arsine and the organic compound of arsenic are used simultaneously with a mixing ratio to achieve a desired high resistivity in the semi-insulating layer.